RFD16N05LSM9A دیتاشیت

RFD16N05LSM9A

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نام دیتاشیت RFD16N05LSM9A
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت RFD16N05LSM9A

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi RFD16N05LSM9A
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 60W
  • Total Gate Charge (Qg@Vgs): 80nC@10V
  • Drain Source Voltage (Vdss): 50V
  • Continuous Drain Current (Id): 16A
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 47mΩ@5V,16A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: RFD16
  • detail: N-Channel 50V 16A (Tc) 60W (Tc) Surface Mount TO-252AA

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